By Michael F. Crommie (auth.), Samuel H. Cohen, Marcia L. Lightbody (eds.)

This publication represents the compilation of papers provided on the moment Atomic strength Microscopy/Scanning Tunneling Microscopy (AFM/STM) Symposium, held June 7 to nine, 1994, in Natick, Massachusetts, at Natick learn, improvement and Engineering heart, now half ofU.S. military Soldier platforms Command. As with the 1993 symposium, the 1994 symposium supplied a discussion board the place scientists with a typical curiosity in AFM, STM, and different probe microscopies may perhaps have interaction with each other, trade rules and discover the chances for destiny collaborations and dealing relationships. as well as the scheduled talks and poster classes, there has been an gear convey that includes the latest state of the art AFM/STM microscopes, different probe microscopes, imaging and software program, in addition to the most recent microscope-related and pattern practise add-ons. those have been all very favorably obtained through the meeting's attendees. Following starting comments by means of Natick's Commander, Colonel Morris E. expense, Jr., and the Technical Director, Dr. Robert W. Lewis, the symposium all started with the Keynote tackle given through Dr. Michael F. Crommie from Boston collage. The schedule was once divided into 4 significant classes. The papers (and posters) provided on the symposium represented a huge spectrum of subject matters in atomic strength microscopy, scanning tunneling microscopy, and different probe microscopies.

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The identification of the nucleations as diamond is based on Raman spectroscopy. 47 Figure 3. (a) STM image of HOPG surface after atomic hydrogen etching with the surface at room temperature. Large circular etch pits are observed. (b) Close up STM image of the central pit in (a). (c) STM image of central double-pit in (a) after biasing the tip to 10 V for 1 s. 1. to the top right of the pit. New oriented linear nanoscale structures are observed. (d) STM image of the surface shown in (c) after biasing the tip once again to 10 V.

15"18 The main motive for using e-beam resist in the nanometer-scale fabrication of structures is the potential for pattern transfer, since resists exposed to electrons can be developed and used as masks for further processing. Although other techniques already exist which are also being used for the fabrication of structures in the nanometer range, the most successful of which is electron beam lithography, it is hoped that STM-based techniques will be able to complete and even surpass the capabilities of these more conventional techniques.

Direct writing may even make it possible to monitor a device's performance during the fabrication. In this article we present some schemes we recently developed for deposition of nanometer structures that may utilize the combined effects of the laser radiation, and the tunneling gap of a scanning tunneling microscope (see Figure 1) 9 •10 The process is obviously highly nonlinear; it may involve several effects. These include excitation, ionization, heating, melting and evaporation by laser radiation or electrons, field ionization, chemical interactions, and material transfer between the tip, the sample, and the precursor gas.

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